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ACHIEVEMENT研究成果

  • 2023.03.23 Atsushi Tsurumaki-Fukuchi*, Takayoshi Katase, Hiromichi Ohta, Masashi Arita, and Yasuo Takahashi, “Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics”, ACS Appl. Mater. Interfaces XX, XXX-XXX (2023). (March 23, 2023) (DOI: 10.1021/acsami.2c21568) OPEN ACCESS
  • 2023.03.17 日本学士院賞 「最先端電子顕微鏡法の開発とナノ界面工学への貢献(共同研究)」幾原雄一、柴田直哉
  • 2023.02.21 Qian Yang, Hai Jun Cho, Zhiping Bian, Mitsuki Yoshimura, Joonhyuk Lee, Hyoungjeen Jeen, Jinghuang Lin, Jiake Wei, Bin Feng, Yuichi Ikuhara, and Hiromichi Ohta*, “Solid-State Electrochemical Thermal Transistors”, Adv. Funct. Mater. 202214939 (2023). (DOI: 10.1002/adfm.202214939)
  • 2023.02.20 Jason Tam, Peter M. Brodersen, Hiromichi Ohta, and Uwe Erb, “Contamination of rare earth oxide surfaces stored in vacuum environment”, Colloids and Surfaces A: Physicochemical and Engineering Aspects 659, 130829 (2023) (DOI: 10.1016/j.colsurfa.2022.130829)
  • 2023.02.13 T. Yokoi, A. Hamajima, J. Wei, B. Feng, Y. Oshima, K. Matsunaga, N. Shibata, Y. Ikuhara, Atomic and electronic structure of grain boundaries in α-Al2O3: A combination of machine learning, first-principles calculation and electron microscopy, Scripta Materialia 229 (2023) 115368.
  • 2023.02.09 Shunsuke Kitou, Yu Oshima, Atsutomo Nakamura, Katsuyuki Matsunaga, Hiroshi Sawa, Room-temperature plastic deformation modes of cubic ZnS crystals, Acta Materialia, 247 (2023) 118738. https://doi.org/10.1016/j.actamat.2023.118738
  • 2023.02.03 第39回 井上学術賞 「先進原子分解能電子顕微鏡法の開発と材料界面研究への応用」 柴田直哉
  • 2023.01.25 Prashant Ghediya*, Hui Yang, Takashi Fujimoto, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, and Hiromichi Ohta*, “Improved Electron Transport Properties of Zn-rich In-Ga-Zn-O Thin Film Transistors”, J. Phys. Chem. C 127, 2622-2627 (2023). (January 25, 2023) (DOI: 10.1021/acs.jpcc.2c07442)
  • 2023.01.16 11th NUSRシンポジウム ポスター賞受賞 「新規な六方晶Cr-Ge系化合物の高温高圧合成と磁気的性質」 武田良樹, 佐々木拓也, 鬼丸孝博, 丹羽健, 長谷川正
  • 2023.01.10 Sena Hoshino, Yu Oshima, Tatsuya Yokoi, Atsutomo Nakamura, Katsuyuki Matsunaga, DFT calculations of carrier-trapping effects on atomic structures of 30° partial dislocation cores in zincblende II-VI group zinc compounds, Physical Review Materials 7, 013603, 17 January 2023DOI:https://doi.org/10.1103/PhysRevMaterials.7.013603
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